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Advance Product Information
0.3 - 10 GHz Downconverter
TGC1411-EPU
Key Features and Performance
* * * * * * 0.25um pHEMT Technology 0.3-10 GHz RF/LO Frequency Range 0.15-2.5 GHz IF Frequency Range Nominal Conversion Gain of 12 dB Bias 3-5V @ 26 mA Chip Dimensions 1.8 mm x 2.6mm
Primary Applications
*
The TriQuint TGC1411-EPU is a double balanced MMIC mixer design using TriQuint' proven 0.25 um s Power pHEMT process to support a variety of communication system applications including satellite. The double balanced design consists of an integrated Gilbert cell mixer core, RF/LO baluns, differential combiner, and output driver amplifier. The TGC1411 may be operated from a single +3 V to +5 V power supply with typical current draw of 26 mA. The nominal LO power requirement is -5 dBm. The TGC1411 may also be operated as an up-converter. The TGC1411 requires a minimum of off-chip components employing only a 100 pF off-chip bypass capacitor for the power supply line. No additional offchip RF matching components are required. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form.
Satellite Systems Point-to-Point Radio
TGC TGA1411 Typical Down-Conversion Gain 1411
LSB, +5.0V, LO = -5dBm, +25C
18
*
15
Conversion Gain (dB)
12
9
IF=151MHz IF=501MHz IF=1001MHz IF=1501MHz IF=2001MHz IF=2501MHz
6
3 0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1 10.1
RF Frequency (GHz)
TGA1411 Typical P1dB and SSB Noise Figure TGC 1411
LSB, +5.0V, LO = -5dBm, +25C
1 0 -1 18 17 16
-2 -3 -4 -5 -6 -7 -8
P1dB
15 14 13 12
RF IN
IF OUT
Noise Figure
11 10 9 8
LO IN
-9 0.1 1.1 2.1 3.1 4.1 5.1 6.1 7.1 8.1 9.1
10.1
RF Frequency (GHz)
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice. 1
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
SSB Noise Figure (dB)
Output P1dB (dBm)
Advance Product Information
Electrical Characteristics
RECOMMENDED MAXIMUM RATINGS Symbol V+ I+ PD PIN TCH TM TSTG 1/ 2/ Parameter Positive Supply Voltage Positive Supply Current Power Dissipation Input Continuous Wave Power Operating Channel Temperature Mounting Temperature (30 seconds) Storage Temperature Value 8V 80 mA 0.64 W 14 dBm 150 C 320 C -65 to 150 C C Notes 3/
1/, 2/
These ratings apply to each individual FET Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. Total current for the entire MMIC
3/
DC PROBE TESTS (TA = 25 5 C C) Symbol VP Test FET BVTest FET BVTest FET Parameter Pinch-off Voltage Breakdown Voltage gate-source Breakdown Voltage gate-drain Minimum -1.5 -30 -30 Maximum -0.5 -8 -8 Value V V V
ON-WAFER RF PROBE CHARACTERISTICS (TA = 25 5 C C) Symbol Parameter G ILO P1dB IDC Conversion Gain LO Isolation Output P1dB DC Current Test Condition Limit Vd=5V, LO=-5dBm Min Nom Max FRF = 1.0 GHz 13 16 20 FLO = 1.6 GHz FLO = 1.6 GHz -30 -20 FRF = 1.0 GHz -5 -1 FLO = 1.6 GHz 26 35 Units dB dB dB dBm mA
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
2
Advance Product Information
RF-Probe Performance Summary
3500 Mean = 16.7 dB Sigma = 0.54 dB 700 Mean = 29.3 dB Sigma = 7.7 dB
3000
600
2500
500
Number of Devices
2000
Number of Devices
14 15 16 17 18 19
400
1500
300
1000
200
500
100
0
0 15 20 25 30 35 40 45
LO to Output Isolation (dB)
Down-Conversion Gain Down-Conversion Gain
LO-IF Isolation LO-IF Isolation
Typical Performance
Parameter RF Frequency IF Frequency LO Frequency LO Power Conversion Gain* Output P1dB* SSB Noise Figure* LO Isolation Input Port Return Loss Output Port Return Loss LO Port Return Loss Supply Current
Units GHz GHz GHz dBm dB dBm dB dB dB dB dB mA
+5V Supply 0.3 - 10.0 0.15 - 2.5 0.45 - 12.5 -5 0 15 17.0 -1 0.0 11 15.0 -30 -12 -12 -12 26 28.0
+3V Supply 0.3 - 10.0 0.15 - 2.5 0.45 - 12.5 -5 0 13 14.5 -8 -4.5 11 11.0 -30 -12 -12 -12 22 24.0
* IF = 501 MHz
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
50
3
Advance Product Information
Mechanical Characteristics
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process specifications. Specifications are subject to change without notice.
TriQuint Semiconductor Texas : (972)994 8465
Fax (972)994 8504 Web: www.triquint.com
4
Advance Product Information
VD
100 pF RF IN IF OUT
LO IN
Chip Assembly and Bonding Diagram
Reflow process assembly notes: * * * * * AuSn (80/20) solder with limited exposure to temperatures at or above 300 C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes: * * * * * * * vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical
Interconnect process assembly notes: * * * * * thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200 C
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas : (972)994 8465 Fax (972)994 8504 Web: www.triquint.com
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